TP0202K-T1-E3 Vishay, TP0202K-T1-E3 Datasheet

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TP0202K-T1-E3

Manufacturer Part Number
TP0202K-T1-E3
Description
MOSFET P-CH 30V 385MA SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of TP0202K-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
385mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1nC @ 10V
Input Capacitance (ciss) @ Vds
31pF @ 15V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.4 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.385 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-385mA
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
TP0202K-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP0202K-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71609
S-83053-Rev. E, 29-Dec-08
G
S
Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free)
V
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
DS
- 30
1
2
(V)
(SOT-23)
Top View
TO-236
1.4 at V
3.5 at V
R
DS(on)
GS
GS
a
TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free)
= - 4.5 V - 1.3 to - 3.0
= - 10 V - 1.3 to - 3.0
b
(Ω)
3
D
J
= 150 °C)
a
V
GS(th)
Marking Code: 2Kwll
2K = Part Number Code for TP0202K
w = Week Code
ll = Lot Traceability
P-Channel 30-V (D-S) MOSFET
(V)
a
I
D
- 385
- 240
(mA) Q
A
= 25 °C, unless otherwise noted
g
1000
(Typ.)
T
T
T
T
FEATURES
APPLICATIONS
BENEFITS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High-Side Switching
• Low On-Resistance: 1.2 Ω (typ.)
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 14 ns (typ.)
• Low Input Capacitance: 31 pF (typ.)
• 2000 V ESD Protection
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
Available
Memories, Transistors, etc.
®
Symbol
T
Power MOSFET
R
V
V
J,
I
P
DM
thJA
I
DS
GS
D
T
D
stg
- 55 to 150
Limit
- 385
- 280
- 750
± 20
- 30
350
185
350
Vishay Siliconix
TP0202K
www.vishay.com
°C/W
mW
Unit
mA
°C
V
1

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TP0202K-T1-E3 Summary of contents

Page 1

... Marking Code: 2Kwll 2K = Part Number Code for TP0202K Week Code ll = Lot Traceability Top View Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free) TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current ...

Page 2

... TP0202K Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance ...

Page 3

... MHz Drain-to-Source Voltage (V) DS Capacitance Document Number: 71609 S-83053-Rev. E, 29-Dec-08 1200 6 V 5.5 V 1000 iss C oss C rss TP0202K Vishay Siliconix °C J 800 600 400 200 Gate-to-Source Voltage (V) GS Transfer Characteristics 4 200 400 600 I - Drain Current (mA) D On-Resistance vs. Drain Current ...

Page 4

... TP0202K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 1.6 1 200 mA GS 1.2 1.0 0.8 0.6 0.4 0.2 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.5 0 250 µA D 0.3 0.2 0.1 - 0.0 - 0.1 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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