SI1469DH-T1-E3 Vishay, SI1469DH-T1-E3 Datasheet

MOSFET P-CH 20V 2.7A SC70-6

SI1469DH-T1-E3

Manufacturer Part Number
SI1469DH-T1-E3
Description
MOSFET P-CH 20V 2.7A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1469DH-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
2.78W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.2 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
155mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1469DH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1469DH-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
38 597
Part Number:
SI1469DH-T1-E3
Manufacturer:
Vishay
Quantity:
32 132
Company:
Part Number:
SI1469DH-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 74441
S10-0646-Rev. C, 22-Mar-10
D
D
G
Ordering Information: Si1469DH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
1
2
3
SC-70 (6-LEADS)
(V)
SOT-363
Top View
0.100 at V
0.155 at V
0.080 at V
R
Si1469DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
6
5
4
GS
GS
GS
D
D
S
= - 4.5 V
= - 2.5 V
J
a, b
(Ω)
= - 10 V
= 150 °C)
a, d
P-Channel 20 V (D-S) MOSFET
Marking Code
BL XX
a, b
a, b
I
D
Part #
Code
- 2.7
- 2.7
- 2.7
(A)
c
c, d
Lot Traceability
and Date Code
A
= 25 °C, unless otherwise noted
Q
Steady State
5.5 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Load Switch for Portable Devices
Symbol
Symbol
T
R
R
Definition
Compliant to RoHS Directive 2002/95/EC
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
60
34
G
P-Channel MOSFET
- 55 to 150
- 1.25
- 3.2
- 2.6
1.5
- 2.7
Limit
- 2.7
± 12
- 2.3
2.78
1.78
1
- 20
260
- 8
a, b
a, b
a, b
a, b
a, b
c
S
D
c
Maximum
80
45
Vishay Siliconix
Si1469DH
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1469DH-T1-E3 Summary of contents

Page 1

... D Marking Code Top View Ordering Information: Si1469DH-T1-E3 (Lead (Pb)-free) Si1469DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current a, b Maximum Power Dissipation ...

Page 2

... Si1469DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 74441 S10-0646-Rev. C, 22-Mar- 1.8 2.4 3.0 4.2 5.6 7 Si1469DH Vishay Siliconix 2.5 2.0 1 125 °C C 1.0 0 ° ° 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 640 C iss 480 320 C oss ...

Page 4

... Si1469DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° °C J 0.1 0.01 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.9 1.2 1 250 µ 100 125 150 ...

Page 5

... T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1469DH Vishay Siliconix 3.5 2.8 2.1 1.4 0.7 0 100 T - Case Temperature (°C) C Power Derating, Junction-to-Foot 125 150 www ...

Page 6

... Si1469DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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