SI2307BDS-T1-E3 Vishay, SI2307BDS-T1-E3 Datasheet

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SI2307BDS-T1-E3

Manufacturer Part Number
SI2307BDS-T1-E3
Description
MOSFET P-CH 30V 2.5A SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SI2307BDS-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
78 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 15V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.078 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3.2A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Power Dissipation Pd
1.25W
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.078Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2307BDS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2307BDS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
31 276
Part Number:
SI2307BDS-T1-E3
Manufacturer:
VISHAY
Quantity:
5 863
Part Number:
SI2307BDS-T1-E3
Manufacturer:
VISHAY
Quantity:
220
Part Number:
SI2307BDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2307BDS-T1-E3
0
Company:
Part Number:
SI2307BDS-T1-E3
Quantity:
12 000
Part Number:
SI2307BDS-T1-E3/GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72699
S-80427-Rev. C, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
V
DS
- 30
(V)
b
0.130 at V
0.078 at V
a
R
DS(on)
J
= 150 °C)
GS
b
c
GS
= - 4.5 V
(Ω)
= - 10 V
Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free)
P-Channel 30-V (D-S) MOSFET
b
b
G
S
A
1
2
I
D
- 3.2
- 2.5
= 25 °C, unless otherwise noted
Si2307BDS (L7)*
* Marking Code
(A)
Si2307BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
T
T
T
T
(SOT-23)
Top View
TO-236
A
A
A
A
b
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
FEATURES
• Halogen-free Option Available
D
Symbol
Symbol
T
R
TrenchFET
J
V
V
I
P
, T
DM
I
I
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
- 1.25
- 3.2
- 2.6
1.25
130
5 s
0.8
80
- 55 to 150
± 20
- 30
- 12
Steady State
Maximum
- 0.75
- 2.5
- 2.0
0.75
0.48
100
166
Vishay Siliconix
Si2307BDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI2307BDS-T1-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.078 0.130 4 Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) b Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2307BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 72699 S-80427-Rev. C, 03-Mar- 700 600 500 400 300 200 GS 100 Si2307BDS Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si2307BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0 250 µA D 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.6 0.5 0.4 0.3 0.2 0 °C J 0.0 0.8 1.0 1 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72699. Document Number: 72699 S-80427-Rev. C, 03-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2307BDS Vishay Siliconix Notes ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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