ZVN4210GTC Diodes Zetex, ZVN4210GTC Datasheet - Page 3

• Manufacturer Part Number: ZVN4210GTC
• Description: MOSFET N-CHAN 100V SOT223
• Manufacturer: Diodes Zetex

Specifications of ZVN4210GTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 800mA
• Vgs(th) (max) @ Id: 2.4V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Normalised R
5
4
3
2
1
0
200
160
120
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Capacitance v drain-source voltage
ZVN4210G
80
40
0
0
0
1
-50 -25
V
Saturation Characteristics
DS
V
2
- Drain Source Voltage (Volts)
DS
20
DS(on)
-Drain Source Voltage (Volts)
T
0 25 50 75 100
3
j
-Junction Temperature (°C)
4
and V
40
TYPICAL CHARACTERISTICS
5
6
GS(th)
60
125
7
v Temperature
150
8
80
175 200
V
I
D=
V
I
GS=
9
D=
GS=
1.5A
1mA
10V
V
10
DS
V
10V
9V
7V
4V
3.5V
3V
8V
2.5V
2V
6V
5V
225
GS=
100
C
C
C
iss
oss
rss
100
1000
10
900
800
600
500
400
300
100
700
200
1
0.1
14
12
10
16
0
8
6
4
2
0
Gate charge v gate-source voltage
Transconductance v drain current
On-resistance v drain current
0
0
I
D-
1
I
D(on)
I
D=
Drain Current (Amps)
1
1.5A
V
GS
- Drain Current (Amps)
=3V
2
Q-Charge (nC)
V
DS=
3.5V
2
1.0
10V
3
V
20V
DD
=
5V
3
50V
6V
4
80V
8V 10V
4
5
10
5
6