ZVN2110ASTOA Diodes Zetex, ZVN2110ASTOA Datasheet - Page 2
![MOSFET N-CHAN 100V TO92-3](/photos/5/46/54641/89-to-92_sml.jpg)
ZVN2110ASTOA
Manufacturer Part Number
ZVN2110ASTOA
Description
MOSFET N-CHAN 100V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVN2110A.pdf
(3 pages)
Specifications of ZVN2110ASTOA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
320mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
75pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
10
8
4
10
6
2
1.6
1.2
0.8
0.4
2.0
0
5
1
On-resistance v gate-source voltage
0
1
Voltage Saturation Characteristics
0
0
V
V
GS-
DS
V
10V
Output Characteristics
V
GS=
9V
20
2
Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
GS-
8V
Gate Source Voltage (Volts)
7V
40
4
6V
10
TYPICAL CHARACTERISTICS
5V
60
6
100mA
500mA
I
1A
D
=
80
8
4V
100
100
10
I
1A
3V
100mA
500mA
D=
3-365
Normalised R
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
2.0
0
0
-40 -20
Saturation Characteristics
V
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
2
GS-
2
DS(on)
T
0 20 40 60 80
Gate Source Voltage (Volts)
j
-Junction Temperature (°C)
4
and V
4
ZVN2110A
GS(th)
6
6
100
v Temperature
120
8
140 160
8
V
I
V
D=
I
GS=
D=
GS=
1 A
1mA
10V
V
DS
10
180
V
V
10
DS=
DS=
V
10V
5V
4V
7V
6V
3V
9V
GS=
8V
25V
10V