SI3851DV-T1-E3 Vishay, SI3851DV-T1-E3 Datasheet - Page 6
![MOSFET P-CH 30V 1.6A 6-TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3851DV-T1-E3
Manufacturer Part Number
SI3851DV-T1-E3
Description
MOSFET P-CH 30V 1.6A 6-TSOP
Manufacturer
Vishay
Datasheet
1.SI3851DV-T1-E3.pdf
(7 pages)
Specifications of SI3851DV-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
200 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.6nC @ 5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+/- 1.6 A
Power Dissipation
0.83 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3851DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3851DV-T1-E3
Manufacturer:
Vishay
Quantity:
74 000
Si3851DV
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
www.vishay.com/ppg?70978.
2
1
10
10
-4
-4
0.02
0.05
0.2
0.05
Duty Cycle = 0.5
0.1
0.1
0.2
Duty Cycle = 0.5
0.02
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
A
10
= 25 °C, unless otherwise noted
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
Notes:
P
0
DM
JM
- T
A
t
1
1
= P
S09-2275-Rev. B, 02-Nov-09
t
2
DM
Document Number: 70978
Z
thJA
thJA
100
(t)
t
t
1
2
= 140 °C/W
6
0
1
0
0