SI4620DY-T1-E3 Vishay, SI4620DY-T1-E3 Datasheet

MOSFET N-CH 30V 7.5A 8-SOIC

SI4620DY-T1-E3

Manufacturer Part Number
SI4620DY-T1-E3
Description
MOSFET N-CH 30V 7.5A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4620DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
35 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
1040pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
52mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4620DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4620DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4620DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 73862
S09-1341-Rev. D, 13-Jul-09
Ordering Information: Si4620DY-T1-E3 (Lead (Pb)-free)
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
V
DS
30
KA
30
(V)
(V)
A
G
A
S
N-Channel 30-V (D-S) MOSFET with Schottky Diode
0.052 at V
0.035 at V
1
2
3
4
Diode Forward Voltage
R
Si4620DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
Top V ie w
0.470 at 3 A
GS
GS
SO-8
(Ω)
J
V
= 4.5 V
= 10 V
= 150 °C) (MOSFET)
F
(V)
8
7
6
5
K
K
D
D
I
D
7.4
6.1
(A)
A
= 25 °C, unless otherwise noted
Q
I
F
4.2 nC
g
(A)
3
(Typ.)
a
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
A
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Applications
Definition
- Ideal for Boost Circuits
HDD Driver
Symbol
T
J
V
V
V
I
I
P
, T
DM
I
I
I
FM
GS
DS
KA
D
S
F
D
stg
G
®
Plus Power MOSFET
N-Channel MOSFET
S
D
- 55 to 150
1.7
1.3
Limit
± 20
2
260
7.5
4.8
2.6
3.1
1.9
1.8
1.1
30
30
40
a, b
6
6
3
8
2
3
a, b
a, b
Vishay Siliconix
K
A
Si4620DY
www.vishay.com
Unit
°C
W
V
A
1

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SI4620DY-T1-E3 Summary of contents

Page 1

... Top Ordering Information: Si4620DY-T1-E3 (Lead (Pb)-free) Si4620DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) ...

Page 2

... Si4620DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Notes: a. Surface Mounted on FR4 board ≤ Maximum under Steady State conditions for MOSFETS is 110 °C/W. d. Maximum under Steady State conditions for Schottky is 115 °C/W. ...

Page 3

... J Symbol Test Conditions 125 ° ° 106 ° ° 125 ° Si4620DY Vishay Siliconix Min. Typ. Max. 2.6 40 0.8 1 ° Min. Typ. Max. 0.39 0.470 0.35 0.420 0.1 0.2 3.5 17 0.22 0 200 100 www.vishay.com Unit Unit ...

Page 4

... Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com 125 ° °C 0 0.0 0.5 1 ...

Page 5

... I = 250 µ 100 125 150 Limited DS(on 0 °C A Single Pulse BVDSS Limited 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4620DY Vishay Siliconix 0.12 0.10 0.08 0.06 125 °C 25 °C 0.04 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 6

... Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com ...

Page 7

... Single Pulse 0. Document Number: 73862 S09-1341-Rev. D, 13-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4620DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...

Page 8

... Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 0.1 0.01 0.001 0.0001 - Junction Temperature (°C) C Reverse Current vs. Junction Temperature www.vishay.com 0.01 75 100 125 150 300 240 180 120 Reverse Voltage (V) KA Capacitance 150 ° °C J 0.1 0.2 0 0.1 ...

Page 9

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73862. Document Number: 73862 S09-1341-Rev. D, 13-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4620DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C ...

Page 10

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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