SI3475DV-T1-E3 Vishay, SI3475DV-T1-E3 Datasheet

MOSFET P-CH 200V 950MA 6-TSOP

SI3475DV-T1-E3

Manufacturer Part Number
SI3475DV-T1-E3
Description
MOSFET P-CH 200V 950MA 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI3475DV-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.61 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
950mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 50V
Power - Max
3.2W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Transistor Polarity
P Channel
Continuous Drain Current Id
-950mA
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
1.65ohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-4V
Configuration
Dual
Resistance Drain-source Rds (on)
1.61 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.75 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3475DV-T1-E3TR
Notes:
a. T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74249
S09-0766-Rev. B, 04-May-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
- 200
C
DS
= 25 °C.
(V)
Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free)
1.61 at V
1.65 at V
3 mm
R
DS(on)
D
G
D
GS
GS
J
= - 10 V
(Ω)
= - 6 V
= 150 °C)
b, d
Top View
1
2
3
TSOP-6
2.85 mm
Si3475DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel 200-V (D-S) MOSFET
6
5
4
I
- 0.95
- 0.93
D
(A)
a
D
S
D
A
= 25 °C, unless otherwise noted
Q
g
8 nC
Steady State
(Typ.)
t ≤ 5 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
AI
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Active Clamp Circuits in DC/DC Power Supplies
XXX
Part # Code
Definition
Symbol
R
R
thJA
thJF
Symbol
T
Lot Traceability
and Date Code
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
and UIS Tested
®
Power MOSFET
Typical
51
32
- 55 to 150
G
- 0.75
- 0.59
- 0.95
1.25
- 0.77
Limit
1.6
- 200
± 20
- 2.6
0.45
Maximum
2
3.2
2.1
- 3
P-Channel MOSFET
3
b,c
b,c
62.5
b,c
Vishay Siliconix
b,c
b,c
39
a
S
D
Si3475DV
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI3475DV-T1-E3

SI3475DV-T1-E3 Summary of contents

Page 1

... TSOP-6 Top View 2.85 mm Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free) Si3475DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si3475DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 74249 S09-0766-Rev. B, 04-May-09 25 °C, unless otherwise noted 100 125 V DS 7.5 10.0 12.5 Si3475DV Vishay Siliconix 1.5 1.2 0 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 750 600 C iss ...

Page 4

... Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0.01 0 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 I 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 µ 100 125 150 10 Limited DS(on ...

Page 5

... Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si3475DV Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com ...

Page 6

... Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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