ZVP4424ASTZ Diodes Zetex, ZVP4424ASTZ Datasheet - Page 2

• Manufacturer Part Number: ZVP4424ASTZ
• Description: MOSFET P-CHAN 240V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVP4424ASTZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 750mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

400
300
200
100
0
100
10
1
-0.8
-0.6
-0.4
-0.2
-1.2
-1.0
0
-0.01
0
0
V
Transconductance v drain current
GS
On-resistance vs Drain Current
Saturation Characteristics
V
=-2V
300 s Pulsed Test
V
DS
I
DS
D
-0.2
-2
- Drain Current (Amps)
- Drain Source Voltage (Volts)
=-10V
I
D-
-0.1
Drain Current (Amps)
-0.4
-4
TYPICAL CHARACTERISTICS
-2.5V
300 s Pulsed Test
-3V
-0.6
-6
300 s Pulsed Test
-1
-10V
-0.8
-8
V
GS
=-10V
-2.5V
-5V
-4V
-3V
-2V
-1.0
-10
-10
Normalised R
Transconductance v gate-source voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.8
-0.6
-0.4
-0.2
400
300
200
100
0
-1.0
-1.2
0
-50
0
0
V
Transfer Characteristics
-25
GS
V
DS(on)
- Gate Source Voltage (Volts)
GS
-2
Junction Temperature (°C)
-Gate Source Voltage (Volts)
0
300 s Pulsed Test
V
DS
-2
and V
=-10V
25
-4
V
300 s Pulsed Test
DS
50
=-10V
GS(th)
-6
75
-4
vs Temperature
V
I
D
GS=
=0.2A
100
-10V
-8
V
I
D=
GS=
125
-1mA
V
DS
150
-10
-6