SI7121DN-T1-GE3 Vishay, SI7121DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7121DN-T1-GE3
• Description: MOSFET P-CH 30V 16A 1212-8
• Manufacturer: Vishay

Specifications of SI7121DN-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 15V
• Power - Max: 52W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 25V
• Voltage Vgs Max: -3V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: -3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7121DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69956
S-81466-Rev. C, 23-Jun-08
0.05
0.04
0.03
0.02
0.01
60
50
40
30
20
10
10
0
0
8
6
4
2
0
0
0
0
V
V
I
D
GS
GS
= 10 A
On-Resistance vs. Drain Current
10
= 4.5 V
= 10 V
10
1
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
20
I
D
V
- Drain Current (A)
Gate Charge
DS
V
20
2
GS
= 10 V
= 10 thru 5 V
30
V
DS
30
3
= 15 V
40
V
V
V
GS
DS
GS
40
= 4 V
= 20 V
4
= 3 V
50
New Product
60
50
5
3000
2400
1800
1200
600
1.6
1.4
1.2
1.0
0.8
0.6
0
5
4
3
2
1
0
- 50
0
0
I
D
On-Resistance vs. Junction Temperature
C
= 10 A
- 25
V
rss
GS
C
V
= 25 °C
6
1
oss
V
V
GS
Transfer Characteristics
DS
GS
T
0
C
J
= 125 °C
iss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
12
2
V
GS
50
Vishay Siliconix
= - 10 V
18
3
75
V
Si7121DN
GS
V
GS
= - 55 °C
www.vishay.com
100
= - 4.5 V
24
4
125
150
30
5
3