SI7121DN-T1-GE3 Vishay, SI7121DN-T1-GE3 Datasheet - Page 3
![MOSFET P-CH 30V 16A 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7121DN-T1-GE3
Manufacturer Part Number
SI7121DN-T1-GE3
Description
MOSFET P-CH 30V 16A 1212-8
Manufacturer
Vishay
Datasheet
1.SI7121DN-T1-GE3.pdf
(7 pages)
Specifications of SI7121DN-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1960pF @ 15V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10.6 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
16A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
25V
Voltage Vgs Max
-3V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
-3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7121DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7121DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
291
Company:
Part Number:
SI7121DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
4 988
Part Number:
SI7121DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69956
S-81466-Rev. C, 23-Jun-08
0.05
0.04
0.03
0.02
0.01
60
50
40
30
20
10
10
0
0
8
6
4
2
0
0
0
0
V
V
I
D
GS
GS
= 10 A
On-Resistance vs. Drain Current
10
= 4.5 V
= 10 V
10
1
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
20
I
D
V
- Drain Current (A)
Gate Charge
DS
V
20
2
GS
= 10 V
= 10 thru 5 V
30
V
DS
30
3
= 15 V
40
V
V
V
GS
DS
GS
40
= 4 V
= 20 V
4
= 3 V
50
New Product
60
50
5
3000
2400
1800
1200
600
1.6
1.4
1.2
1.0
0.8
0.6
0
5
4
3
2
1
0
- 50
0
0
I
D
On-Resistance vs. Junction Temperature
C
= 10 A
- 25
V
rss
GS
C
V
= 25 °C
6
1
oss
V
V
GS
Transfer Characteristics
DS
GS
T
0
C
J
= 125 °C
iss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
12
2
V
GS
50
Vishay Siliconix
= - 10 V
18
3
75
V
Si7121DN
GS
V
GS
= - 55 °C
www.vishay.com
100
= - 4.5 V
24
4
125
150
30
5
3