SI7465DP-T1-GE3 Vishay, SI7465DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7465DP-T1-GE3
• Description: MOSFET P-CH 60V 3.2A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7465DP-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7465DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
0.12
0.10
0.08
0.06
0.04
0.02
0.00
40
10
20
16
12
1
8
4
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
V
5
On-Resistance vs. Drain Current
= 5 A
GS
10
= 30 V
V
SD
= 4.5 V
Qg - Total Gate Charge (nC)
- Source-to-Drain Voltage (V)
0.4
10
I
D
T
- Drain Current (A)
Gate Charge
J
20
= 150 °C
0.6
15
30
0.8
20
V
GS
T
= 10 V
J
40
= 25 °C
1.0
25
1.2
30
50
1800
1500
1200
0.30
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
-
0
0
50
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-
V
I
D
25
GS
10
= 5 A
C
rss
= 10 V
2
V
V
T
DS
0
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
20
C
25
oss
Capacitance
4
C
iss
50
I
30
D
Vishay Siliconix
= 5 A
6
75
40
Si7465DP
100
www.vishay.com
8
50
125
150
10
60
3