ZVN4306GVTC Diodes Zetex, ZVN4306GVTC Datasheet - Page 2
![MOSFET N-CHAN 60V SOT223](/photos/5/46/54610/89-sot-223_sml.jpg)
ZVN4306GVTC
Manufacturer Part Number
ZVN4306GVTC
Description
MOSFET N-CHAN 60V SOT223
Manufacturer
Diodes Zetex
Datasheet
1.ZVN4306GVTA.pdf
(4 pages)
Specifications of ZVN4306GVTC
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
330 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZVN4306GVTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance (1)
Input Capacitance (2) C
Common Source
Output Capacitance
(2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
ZVN4306GV
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
60
1.3
12
0.7
TYP.
0.22
0.32
amb
MAX.
3
20
10
100
0.33
0.45
350
140
30
8
25
30
16
= 25°C unless otherwise stated).
UNIT CONDITIONS.
V
V
nA
A
S
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
=60V, V
=48V, V
=10V, V
=25V,I
=25 V, V
= 20V, V
=10V, I
=5V, I
25V, V
D
D
GS
=1.5A
DS
D
=3A
GS
GS
GS
=3A
GEN
GS
=0V
= V
DS
=0V
=0V, T=125°C
=10V
=0V, f=1MHz
=10V, I
=0V
GS
D
=3A
(2)