ZXM64P03XTC Diodes Zetex, ZXM64P03XTC Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single ZXM64P03XTC
Manufacturer Part Number
ZXM64P03XTC
Description
MOSFET P-CHAN 30V MSOP8
Manufacturer
Diodes Zetex
Specifications of ZXM64P03XTC
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
825pF @ 25V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
•
•
ORDERING INFORMATION
DEVICE MARKING
ZXM4P03
ISSUE 1 - OCTOBER 2005
DEVICE
ZXM64P03XTA
ZXM64P03XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
=-30V; R
DS(ON)
REEL SIZE
(inches)
=0.075
13
7
I
D
12 embossed
12 embossed
TAPE WIDTH
=-3.8A
(mm)
1
QUANTITY
PER REEL
1,000
4,000
ZXM64P03X
S
S
S
G
S E M I C O N D U C T O R S
Top view
1
MSOP8
Pin out
D
D
D
D
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ZXM64P03XTC Summary of contents
... Low profile SOIC package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM64P03XTA 7 ZXM64P03XTC 13 DEVICE MARKING ZXM4P03 ISSUE 1 - OCTOBER 2005 I =-3.8A D TAPE WIDTH QUANTITY (mm) PER REEL 12 embossed 1,000 12 embossed 4,000 ...
ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C (a) ...
ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXM64P03X ...
ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay ...
ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXM64P03X ...
ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 6 ZXM64P03X ...
PACKAGE DETAILS PACKAGE DIMENSIONS DIM Millimeters MIN MAX MIN A 0.91 1.11 0.036 A1 0.10 0.20 0.004 B 0.25 0.36 0.010 C 0.13 0.18 0.005 D 2.95 3.05 0.116 e 0.65NOM ...
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