SI2323DS-T1 Vishay, SI2323DS-T1 Datasheet - Page 5

• Manufacturer Part Number: SI2323DS-T1
• Description: MOSFET P-CH 20V SOT23
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2323DS-T1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 72024
S-22121—Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
2
1
10
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
- 2
Square Wave Pulse Duration (sec)
New Product
10
- 1
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
P
10
DM
JM
- T
A
t
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
t
t
(t)
1
2
100
= 120_C/W
Si2323DS
www.vishay.com
600
5