IRFR310TRRPBF Vishay, IRFR310TRRPBF Datasheet - Page 4

MOSFET N-CH 400V 1.7A DPAK

IRFR310TRRPBF

Manufacturer Part Number
IRFR310TRRPBF
Description
MOSFET N-CH 400V 1.7A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR310TRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
3.6ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
3.6 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
Document Number: 91272
4
S10-1135-Rev. C, 10-May-10

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