ZVN4310ASTZ Diodes Zetex, ZVN4310ASTZ Datasheet - Page 3

• Manufacturer Part Number: ZVN4310ASTZ
• Description: MOSFET N-CHAN 100V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN4310ASTZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 850mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Normalised R
10
9
8
7
6
5
4
3
2
1
0
500
400
200
300
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Capacitance v drain-source voltage
0
0
0
1
-50 -25
V
Saturation Characteristics
DS
V
2
- Drain Source Voltage (Volts)
DS
10
DS(on)
-Drain Source Voltage (Volts)
T
0 25 50 75 100
3
j
-Junction Temperature (°C)
4
and V
20
V
20V
TYPICAL CHARACTERISTICS
5
12V
GS=
10V
9V
6
GS(th)
30
8V
125
7
v Temperature
150
8
40
175 200
V
I
7V
D=
V
I
GS=
9
D=
GS=
3.3A
1mA
10V
V
10
DS
225
6V
5V
4V
3V
50
C
C
C
iss
oss
rss
3-395
1.0
0.1
10
0.1
14
12
10
16
4
3
5
2
1
8
6
4
2
0
On-resistance v drain current
0
Gate charge v gate-source voltage
Transconductance v drain current
0
0
V
GS
1
2
=3V
I
D-
2
I
D(on)
I
Drain Current (Amps)
4
D=
3A
3
1
- Drain Current (Amps)
6
4
Q-Charge (nC)
4V 5V
8
5
ZVN4310A
10
6
6V
7
10
12
V
8V
DS=
10V
8
V
10V
50V
100V
10V
20V
14
DD
9
=
16
10 11 12
18
100
20