IRFR420APBF Vishay, IRFR420APBF Datasheet - Page 4

• Manufacturer Part Number: IRFR420APBF
• Description: MOSFET N-CH 500V 3.3A DPAK
• Manufacturer: Vishay

Specifications of IRFR420APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFR420APBF

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
www.vishay.com
4
10000
1000
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
1
20
15
10
1
5
0
0
I =
D
V DS , Drain-to-Source Voltage (V)
2.5A
Q , Total Gate Charge (nC)
G
4
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Ciss
Coss
Crss
8
V
V
V
FOR TEST CIRCUIT
f = 1 MHZ
DS
DS
DS
SEE FIGURE
100
= 400V
= 250V
= 100V
12
SHORTED
13
1000
16
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
0.1
10
10
1
1
0.4
10
T
T
Single Pulse
C
J
Fig. 8 - Maximum Safe Operating Area
= 25 C
= 150 C
T = 150 C
OPERATION IN THIS AREA LIMITED
J
V
V
SD
DS
°
°
0.6
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
100
BY R
T = 25 C
0.8
J
DS(on)
S10-1135-Rev. B, 10-May-10
10us
100us
1ms
10ms
Document Number: 91274
°
1000
1.0
V
GS
= 0 V
10000
1.2