IRFR420APBF Vishay, IRFR420APBF Datasheet - Page 4
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IRFR420APBF
Manufacturer Part Number
IRFR420APBF
Description
MOSFET N-CH 500V 3.3A DPAK
Manufacturer
Vishay
Specifications of IRFR420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFR420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR420APBF
Manufacturer:
IR
Quantity:
150 000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
www.vishay.com
4
10000
1000
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
1
20
15
10
1
5
0
0
I =
D
V DS , Drain-to-Source Voltage (V)
2.5A
Q , Total Gate Charge (nC)
G
4
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Ciss
Coss
Crss
8
V
V
V
FOR TEST CIRCUIT
f = 1 MHZ
DS
DS
DS
SEE FIGURE
100
= 400V
= 250V
= 100V
12
SHORTED
13
1000
16
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
0.1
10
10
1
1
0.4
10
T
T
Single Pulse
C
J
Fig. 8 - Maximum Safe Operating Area
= 25 C
= 150 C
T = 150 C
OPERATION IN THIS AREA LIMITED
J
V
V
SD
DS
°
°
0.6
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
100
BY R
T = 25 C
0.8
J
DS(on)
S10-1135-Rev. B, 10-May-10
10us
100us
1ms
10ms
Document Number: 91274
°
1000
1.0
V
GS
= 0 V
10000
1.2