IRFR420APBF Vishay, IRFR420APBF Datasheet - Page 2

• Manufacturer Part Number: IRFR420APBF
• Description: MOSFET N-CH 500V 3.3A DPAK
• Manufacturer: Vishay

Specifications of IRFR420APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFR420APBF

Diode Characteristics

Dynamic @ T
‚
Document Number: 91274
ƒ
Static @ T
Notes:
V
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
T
Starting T
SD
J
G
eff.
≤ 150°C
≤ 2.5A, di/dt ≤ 270A/µs, V
= 25Ω, I
/∆T
J
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 45mH
AS
J
= 25°C (unless otherwise specified)
= 2.5A. (See Figure 12)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
DD
≤ V
(BR)DSS
,
„
…
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
–––
as C
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
1.4
Min. Typ. Max. Units
oss
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
0.60
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
340
490
while V
–––
–––
–––
330
760 1140
8.1
2.7
12
16
13
53
15
28
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
500
3.0
4.5
4.3
8.5
1.6
25
17
3.3
DS
10
is rising from 0 to 80% V
V/°C
µA
nA
nC
ns
nC
pF
ns
V
Ω
V
S
V
V
V
V
V
V
V
V
V
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
Reference to 25°C, I
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
D
GS
DS
GS
GS
GS
J
J
= 2.5A
= 2.5A
= 25°C, I
= 25°C, I
= 97Ω,See Fig. 10
= 21Ω
= V
= 500V, V
= 400V, V
= 50V, I
= 400V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, See Fig. 6 and 13 „
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.5A, V
= 2.5A
= 250µA
= 1.5A
= 1.5A
GS
GS
DSS
= 0V to 400V …
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
= 0V, T
= 0V
D
www.vishay.com
= 1mA
GS
„
„
J
G
= 0V „
= 125°C
S
+L
D
S
D
)
2