IRFR420TRPBF Vishay, IRFR420TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR420TRPBF
• Description: MOSFET N-CH 500V 2.4A DPAK
• Manufacturer: Vishay

Specifications of IRFR420TRPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm at 10 V
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRFR420PBFTR

IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
Document Number: 91275
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S10-1135-Rev. C, 10-May-10