IRF630STRRPBF Vishay, IRF630STRRPBF Datasheet
IRF630STRRPBF
Specifications of IRF630STRRPBF
Related parts for IRF630STRRPBF
IRF630STRRPBF Summary of contents
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... ° 100 ° ° °C A IRF630S, SiHF630S Vishay Siliconix device design, low on-resistance power capability and the lowest 2 D PAK (TO-263) a SiHF630STRR-GE3 a IRF630STRRPbF a SiHF630STR- IRF630STRR a a SiHF630STR SYMBOL LIMIT V 200 DS V ± 9 5 0.59 0.025 E 250 7.4 AR ...
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... IRF630S, SiHF630S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 4.6 mH 9.0 A, dI/dt 120 A/μs, V ...
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... MOSFET symbol I S showing the integral reverse junction diode ° 9 ° dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91032_02 = 25 °C C IRF630S, SiHF630S Vishay Siliconix MIN. TYP. MAX 170 = 5 1 Top 8 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4 µ ...
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... IRF630S, SiHF630S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width - Gate-to-Source Voltage ( 91032_03 Fig Typical Transfer Characteristics 3 5 2.5 2.0 1.5 1.0 0.5 0 100 120 140 160 T Junction Temperature (° 91032_04 Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 1600 1200 800 400 ...
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... V , Drain-to-Source Voltage (V) 91032_08 DS Fig Maximum Safe Operating Area Document Number: 91032 S10-2695-Rev. B, 29-Nov- 1.3 1.5 91032_09 Fig Maximum Drain Current vs. Case Temperature 10 µs 100 µ IRF630S, SiHF630S Vishay Siliconix 100 125 T , Case Temperature (° D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
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... IRF630S, SiHF630S Vishay Siliconix − 0.5 0.2 0.1 0.05 0.1 0.02 0. 91032_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91032_12c www.vishay.com 6 Single Pulse (Thermal Response Rectangular Pulse Duration (s) ...
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... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91032. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...