SI6415DQ-T1-E3 Vishay, SI6415DQ-T1-E3 Datasheet

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... TSSOP Si6415DQ Top View Ordering Information: Si6415DQ-T1 Si6415DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si6415DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

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... Drain Current (A) D On-Resistance vs. Drain Current 6 Total Gate Charge (nC) g Gate Charge Document Number: 70639 S-80682-Rev. C, 31-Mar- 4500 3600 2700 1800 Si6415DQ Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C oss 900 C rss Drain-to-Source Voltage (V) DS Capacitance 1 6 ...

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... Si6415DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.00 0.25 0.50 0. Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...