IRF9Z14SPBF Vishay, IRF9Z14SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9Z14SPBF
• Description: MOSFET P-CH 60V 6.7A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z14SPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z14SPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91089
S10-1728-Rev. B, 02-Aug-10
91089_01
91089_02
10
10
10
10
10
10
-1
-1
1
0
1
0
10
10
Bottom
Top
Bottom
-1
-1
Top
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS
DS ,
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
10
10
- 4.5 V
1
1
- 4.5 V
91089_03
91089_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
1
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 6.7 A
= - 10 V
- V
5
T
GS ,
25
J ,
Junction Temperature (°C)
°
Gate-to-Source Voltage (V)
C
6
7
175
Vishay Siliconix
°
20 µs Pulse Width
V
C
8
DS
= -
www.vishay.com
25 V
9
10
3