IRF530STRLPBF Vishay, IRF530STRLPBF Datasheet - Page 3
![POWER MOSFET D2PAK](/photos/16/4/160475/to263ab_sml.jpg)
IRF530STRLPBF
Manufacturer Part Number
IRF530STRLPBF
Description
POWER MOSFET D2PAK
Manufacturer
Vishay
Datasheet
1.IRF530SPBF.pdf
(8 pages)
Specifications of IRF530STRLPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
670pF @ 25V
Power - Max
88W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
14A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
160mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91020
S10-1442-Rev. B, 05-Jul-10
91020_01
91020_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
10
1
0
10
-1
Top
Bottom
-1
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
175 °C
1
1
C
= 175 °C
C
4.5 V
= 25 °C
4.5 V
91020_03
91020_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
Fig. 3 - Typical Transfer Characteristics
- 60- 40 - 20 0
4
I
V
D
GS
= 14 A
= 10 V
V
5
T
GS ,
J ,
IRF530S, SiHF530S
Junction Temperature (°C)
Gate-to-Source Voltage (V)
25
20 40 60 80 100 120 140 160
6
°
C
7
175
Vishay Siliconix
°
20 µs Pulse Width
V
C
8
DS
=
50 V
www.vishay.com
9
180
10
3