IRF720SPBF Vishay, IRF720SPBF Datasheet

MOSFET N-CH 400V 3.3A D2PAK

IRF720SPBF

Manufacturer Part Number
IRF720SPBF
Description
MOSFET N-CH 400V 3.3A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF720SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
410pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.8 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.3 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1.8ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF720SPBF
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91044
S-82998-Rev. A, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 3.3 A, dI/dt ≤ 65 A/µs, V
= 50 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 30 mH, R
c
a
DD
b
V
≤ V
GS
e
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
400
3.3
20
11
G
D
IRF720SPbF
SiHF720S-E3
IRF720S
SiHF720S
= 25 Ω, I
D
S
2
PAK (TO-263)
C
Power MOSFET
= 25 °C, unless otherwise noted
V
1.8
GS
AS
at 10 V
= 3.3 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
D
IRF720STRRPbF
SiHF720STR-E3
-
-
2
PAK (TO-263)
IRF720S, SiHF720S
design,
- 55 to + 150
LIMIT
0.025
300
± 20
0.40
400
190
3.3
2.1
3.3
5.0
3.1
4.0
13
50
low
a
a
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF720SPBF Summary of contents

Page 1

... The 2 D PAK (TO-263) is suitable for high current applications S because of its low internal connection resistance and can N-Channel MOSFET dissipate typical surface mount application PAK (TO-263) IRF720SPbF SiHF720S-E3 IRF720S SiHF720S = 25 °C, unless otherwise noted ° ...

Page 2

... IRF720S, SiHF720S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91044 S-82998-Rev. A, 12-Jan-09 4 µs Pulse Width ° 91044_03 = 25 ° µs Pulse Width T = 150 ° 91044_04 = 150 °C C IRF720S, SiHF720S Vishay Siliconix 2 10 ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF720S, SiHF720S Vishay Siliconix 1000 MHz iss 800 rss oss ds 600 C iss 400 C oss C 200 rss Drain-to-Source Voltage ( 91044_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 200 Total Gate Charge (nC) 91044_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91044_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91044 S-82998-Rev. A, 12-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF720S, SiHF720S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF720S, SiHF720S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91044_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 500 Top ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91044. Document Number: 91044 S-82998-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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