SI7462DP-T1-E3 Vishay, SI7462DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7462DP-T1-E3
• Description: MOSFET N-CH 200V 2.6A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7462DP-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.1A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 142mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7462DP-T1-E3TR

Si7462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
- 1.4
- 1.6
0.8
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 μA
75
0.001
0.01
100
0.1
10
10
100
1
0.1
-2
125
Limited by R
Limited
I
Single Pulse
D(on)
T
A
V
= 25 °C
Square Wave Pulse Duration (s)
150
DS
1
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
10
-1
BVDSS Limited
10
80
60
40
20
1
0
100
0.01
I
DM
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
1000
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
t
A
1
S09-0227-Rev. C, 09-Feb-09
= P
t
2
Document Number: 72136
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 55 °C/W
100
600
600