SI7461DP-T1-E3 Vishay, SI7461DP-T1-E3 Datasheet - Page 4

MOSFET P-CH 60V 8.6A PPAK 8SOIC

SI7461DP-T1-E3

Manufacturer Part Number
SI7461DP-T1-E3
Description
MOSFET P-CH 60V 8.6A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7461DP-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.5 mOhm @ 14.4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0145 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.6 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-12.6A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
190mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7461DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7461DP-T1-E3
Manufacturer:
TAIYO
Quantity:
40 000
Part Number:
SI7461DP-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI7461DP-T1-E3
Quantity:
1 170
Part Number:
SI7461DP-T1-E3
0
Si7461DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.01
- 0.2
- 0.4
0.1
0.8
0.6
0.4
0.2
0.0
2
1
10
- 50
- 4
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
- 25
0
10
Threshold Voltage
T
J
- 3
2 5
- Temperature (°C)
5 0
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Limited by R
I
0.01
D
100
0.1
10
7 5
= 250 µA
1
0.1
10
- 2
Limited
* V
100
I
D(on)
GS
DS(on)
Single Pulse
T
A
> minimum V
125
V
= 25 °C
DS
*
Safe Operating Area
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
150
1
10
- 1
GS
at which R
BVDSS Limited
DS(on)
10
1
is specified
100
80
60
40
20
0
0.01
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
-
T
t
A
1
= P
Time (s)
t
2
DM
S10-2244-Rev. G, 04-Oct-10
1
Z
thJA
Document Number: 72567
thJA
100
t
t
1
2
(t)
= 52 °C/W
10
600
100

Related parts for SI7461DP-T1-E3