SI7172DP-T1-GE3 Vishay, SI7172DP-T1-GE3 Datasheet

MOSFET N-CH 200V 25A PPAK 8SOIC

SI7172DP-T1-GE3

Manufacturer Part Number
SI7172DP-T1-GE3
Description
MOSFET N-CH 200V 25A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7172DP-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 5.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
77nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 100V
Power - Max
96W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
76mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.07 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.9 A
Power Dissipation
5.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7172DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7172DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
SI7172DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7172DP-T1-GE3
Quantity:
14 600
Company:
Part Number:
SI7172DP-T1-GE3
Quantity:
14 600
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Based on T
Document Number: 68763
S-81730-Rev. A, 04-Aug-08
Ordering Information: Si7172DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
200
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
6
0.070 at V
0.076 at V
D
PowerPAK SO-8
Bottom View
5
R
http://www.vishay.com/ppg?73461
D
DS(on)
GS
GS
1
(Ω)
J
= 10 V
= 6 V
S
= 150 °C)
b, f
2
S
N-Channel 200-V (D-S) MOSFET
3
S
5.15 mm
4
G
I
D
25
24
(A)
g
d, e
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
34
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
• Industrial
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
GS
DS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
1.0
18
- 55 to 150
5.9
4.8
4.5
5.4
3.5
11.25
Limit
± 20
61.5
200
30
260
25
20
30
15
96
b, c
b, c
b, c
b, c
b, c
a
Maximum
G
1.5
23
Vishay Siliconix
N-Channel MOSFET
®
Si7172DP
Package
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SI7172DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7172DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7172DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68763 S-81730-Rev. A, 04-Aug-08 New Product 3600 3000 2400 1800 1200 600 2.3 2.0 1 160 V 1.4 DS 1.1 0.8 0 Si7172DP Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C rss C oss 120 ...

Page 4

... Si7172DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.0 3.6 3.2 2.8 2.4 2 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.16 0.14 0.12 0. °C J 0.08 0.06 0.04 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.4 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7172DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si7172DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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