SIR470DP-T1-GE3 Vishay, SIR470DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR470DP-T1-GE3
• Description: MOSFET N-CH 40V 60A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SIR470DP-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 5660pF @ 20V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0023 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 190 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38.8 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.7mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIR470DP-T1-GE3TR

SiR470DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
T
Source-Drain Diode Forward Voltage
J
0.2
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
J
0.8
= 25 °C
Limited by R
0.01
100
100
0.1
10
I
D
1
0.01
= 5 mA
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
A
GS
DS(on)
= 25 °C
New Product
> minimum V
1.2
150
V
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.012
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
10
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S-82295-Rev. A, 22-Sep-08
Document Number: 68899
6
7
1
T
I
T
D
J
J
8
= 20 A
= 125 °C
= 25 °C
9
10
1
0