SIR470DP-T1-GE3 Vishay, SIR470DP-T1-GE3 Datasheet - Page 4
![MOSFET N-CH 40V 60A PPAK 8SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SIR470DP-T1-GE3
Manufacturer Part Number
SIR470DP-T1-GE3
Description
MOSFET N-CH 40V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet
1.SIR470DP-T1-GE3.pdf
(7 pages)
Specifications of SIR470DP-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
5660pF @ 20V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0023 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
190 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38.8 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIR470DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR470DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiR470DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
- 50
1
0.0
- 25
T
Source-Drain Diode Forward Voltage
J
0.2
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
J
0.8
= 25 °C
Limited by R
0.01
100
100
0.1
10
I
D
1
0.01
= 5 mA
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
A
GS
DS(on)
= 25 °C
New Product
> minimum V
1.2
150
V
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.012
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
10
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S-82295-Rev. A, 22-Sep-08
Document Number: 68899
6
7
1
T
I
T
D
J
J
8
= 20 A
= 125 °C
= 25 °C
9
10
1
0