IRFU214 Vishay, IRFU214 Datasheet - Page 6

• Manufacturer Part Number: IRFU214
• Description: MOSFET N-CH 250V 2.2A I-PAK
• Manufacturer: Vishay

Specifications of IRFU214

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.2A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFU214

IRFR214, IRFU214, SiHFR214, SiHFU214
Vishay Siliconix
www.vishay.com
6
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Fig. 12a - Unclamped Inductive Test Circuit
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V
Fig. 13a - Basic Gate Charge Waveform
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to obtain
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AS
R
Q
10 V
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GS
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DS
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Charge
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Q
Q
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D.U.T.
0.01 Ω
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
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DD
Fig. 12b - Unclamped Inductive Waveforms
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I
12 V
AS
DS
Fig. 13b - Gate Charge Test Circuit
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GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
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p
I
G
S10-1122-Rev. C, 10-May-10
Document Number: 91269
D.U.T.
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DS
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