IRFI820GPBF Vishay, IRFI820GPBF Datasheet - Page 7
![MOSFET N-CH 500V 2.1A TO220FP](/photos/13/92/139247/irfi530npbf_sml.jpg)
IRFI820GPBF
Manufacturer Part Number
IRFI820GPBF
Description
MOSFET N-CH 500V 2.1A TO220FP
Manufacturer
Vishay
Specifications of IRFI820GPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Gate Charge Qg
24 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.1 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
2.1A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFI820GPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFI820GPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91158.
Document Number: 91158
S-81290-Rev. A, 16-Jun-08
Re-applied
voltage
Reverse
recovery
current
+
-
R
D.U.T
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
IRFI820G, SiHFI820G
= 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
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