IRF710 Vishay, IRF710 Datasheet - Page 4

• Manufacturer Part Number: IRF710
• Description: MOSFET N-CH 400V 2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF710

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 11 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.9 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF710

IRF710, SiHF710
Vishay Siliconix
www.vishay.com
4
91041_05
91041_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
400
300
200
100
20
16
12
0
8
4
0
10
0
I
0
D
= 2.0 A
V
DS ,
2
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
4
= 80 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 200 V
= 0 V, f = 1 MHz
= C
6
= C
= C
C
C
C
iss
oss
rss
10
For technical questions, contact: [e-mail]
gs
gd
V
ds
DS
1
+ C
+ C
= 320 V
8
gd
gd
For test circuit
see figure 13
, C
ds
10
Shorted
12
91041_08
91041_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
-1
1
2
0
5
2
5
2
5
2
0.4
1
Fig. 8 - Maximum Safe Operating Area
150
2
V
°
V
C
DS
SD
0.6
Operation in this area limited
5
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
10
T
T
Single Pulse
0.8
C
J
by R
25
= 150 °C
= 25 °C
2
°
C
DS(on)
5
S09-0070-Rev. A, 02-Feb-09
1.0
Document Number: 91041
10
2
2
1.2
V
GS
= 0 V
100
1
10
5
ms
ms
10
µs
1.4
3