IRFU9010 Vishay, IRFU9010 Datasheet - Page 3

• Manufacturer Part Number: IRFU9010
• Description: MOSFET P-CH 50V 5.3A I-PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFU9010

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 50 V
• Continuous Drain Current: 5.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFU9010

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 2 - Typical Transfer Characteristics
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 3 - Typical Saturation Characteristics
Document Number: 91378
www.vishay.com
S10-1135-Rev. C, 10-May-10
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