IRLD014 Vishay, IRLD014 Datasheet - Page 6
![MOSFET N-CH 60V 1.7A 4-DIP](/photos/5/47/54769/698-4-dip_sml.jpg)
IRLD014
Manufacturer Part Number
IRLD014
Description
MOSFET N-CH 60V 1.7A 4-DIP
Manufacturer
Vishay
Datasheet
1.IRLD014.pdf
(8 pages)
Specifications of IRLD014
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 1A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLD014
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLD014
Manufacturer:
IR
Quantity:
20 000
IRLD014, SiHLD014
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
V
Fig. 13a - Basic Gate Charge Waveform
AS
GS
V
G
R
10 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 W
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2465-Rev. D, 08-Nov-10
Document Number: 91307
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS