IRFR120 Vishay, IRFR120 Datasheet - Page 2

• Manufacturer Part Number: IRFR120
• Description: MOSFET N-CH 100V 7.7A DPAK
• Manufacturer: Vishay

Specifications of IRFR120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 17 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 27 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR120; IRFR120IR

IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
DS
SD
DD
Temperature Coefficient
≤ 9.2 A, dI/dt ≤ 110 A/µs, V
= 25 V, starting T
a
J
= 25 °C, L = 5.3 mH, R
J
= 25 °C, unless otherwise noted
DD
≤ V
DS
, T
J
≤ 150 °C.
SYMBOL
SYMBOL
ΔV
G
R
V
t
t
I
I
C
R
V
C
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
= 25 Ω, I
GSS
DSS
g
Q
L
DS
L
t
DS
oss
t
thJA
thJA
thJC
iss
rss
gd
fs
gs
r
f
D
S
g
C
/T
= 25 °C, unless otherwise noted
J
AS
= 7.7 A (see fig. 12).
Between lead,
6 mm (0.25") from
package and center of
die contact
V
V
for 10 s
GS
GS
V
R
DS
G
Reference to 25 °C, I
= 10 V
= 10 V
= 18 Ω, R
MIN.
= 80 V, V
-
-
-
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
DS
DS
GS
DD
DS
= 100 V, V
= V
= 0 V, I
= 50 V, I
V
= 50 V, I
V
V
GS
DS
D
GS
GS
GS
I
D
= 5.2 Ω, see fig. 10
= ± 20 V
, I
= 25 V,
= 0 V, T
= 0 V,
= 9.2 A, V
see fig. 6 and 13
D
D
D
D
= 250 µA
= 250 µA
I
GS
D
= 9.2 A,
SYMBOL
= 4.6 A
T
= 4.6 A
D
TYP.
J
= 0 V
, T
J
= 1 mA
-
-
-
= 125 °C
DS
G
stg
= 80 V,
b
D
S
b
b
- 55 to + 150
MIN.
100
2.0
1.6
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
LIMIT
3.0
50
260
S-Pending-Rev. A, 21-Jul-08
d
Document Number: 91266
TYP.
0.13
360
150
6.8
4.5
7.5
34
27
18
17
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
0.27
250
4.0
4.4
7.7
25
16
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
°C
UNIT
V/°C
nA
µA
nC
nH
pF
ns
V
V
Ω
S