IRL520 Vishay, IRL520 Datasheet - Page 7

• Manufacturer Part Number: IRL520
• Description: MOSFET N-CH 100V 9.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRL520

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL520

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91298.
Document Number: 91298
S11-0518-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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voltage
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D.U.T.
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Driver gate drive
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D.U.T. V
Inductor current
This datasheet is subject to change without notice.
= 5 V for logic level device
P.W.
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Peak Diode Recovery dV/dt Test Circuit
Fig. 14 - For N-Channel
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Body diode forward drop
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Circuit layout con ideration
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P.W.
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IRL520, SiHL520
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www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
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