IRF840LCSPBF Vishay, IRF840LCSPBF Datasheet - Page 5
![MOSFET N-CH 500V 8A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF840LCSPBF
Manufacturer Part Number
IRF840LCSPBF
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF840LCSPBF.pdf
(8 pages)
Specifications of IRF840LCSPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Document Number: 91068
S09-0071-Rev. A, 02-Feb-09
91068_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
8.0
6.0
4.0
2.0
0.0
91068_11
R
25
20 V
G
V
DS
10
0.1
t
10
p
-2
1
10
50
T
-5
C
I
D = 0.5
0.2
0.1
0.05
0.02
0.01
AS
, Case Temperature (°C)
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
10
100
-4
15 V
Single Pulse
(Thermal Response)
Driver
125
+
- V
DD
A
10
150
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
p
1
j
= P
D.U.T.
P
DM
DM
Vishay Siliconix
R
D
x Z
t
d(off)
V
t
1
1
thJC
DS
/t
2
t
2
+ T
t
f
+
-
C
10
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V
DD
5