IRFU9214 Vishay, IRFU9214 Datasheet

IRFU9214

Manufacturer Part Number

IRFU9214

Description

MOSFET P-CH 250V 2.7A I-PAK

Manufacturer

Vishay

Datasheets

1.IRFR9214.pdf (8 pages)

2.IRFU9214.pdf (10 pages)

Specifications of IRFU9214

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3 Ohm @ 1.7A, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

2.7A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

14nC @ 10V

Input Capacitance (ciss) @ Vds

220pf @ 25V

Power - Max

50W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak, VPak (3 straight leads + tab)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

3 Ohms

Drain-source Breakdown Voltage

- 250 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.7 A

Power Dissipation

50 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFU9214

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFU9214PBF

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRFU9214PBF

Quantity:

3 000

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Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91282

S-82992-Rev. B, 12-Jan-09

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

DS(on)

(TO-252)

(Max.) (nC)

(nC)

DPAK

(V)

≤ - 2.7 A, dI/dt ≤ 600 A/µs, V

(Ω)

= 25 °C, L = 27 mH, R

(TO-251)

IPAK

DPAK (TO-252)

IRFR9214PbF

SiHFR9214-E3

IRFR9214

SiHFR9214

D S

= - 10 V

≤ V

= 25 Ω, I

, T

P-Channel MOSFET

Single

- 250

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

3.1

6.8

≤ 150 °C.

= - 2.7 A (see fig. 12).

Power MOSFET

= 25 °C, unless otherwise noted

3.0

DPAK (TO-252)

IRFR9214TRLPbF

SiHFR9214TL-E3

IRFR9214TRL

SiHFR9214TL

at - 10 V

for 10 s

= 25 °C

= 100 °C

= 25 °C

FEATURES

• P-Channel

• Surface Mount (IRFR9214, SiHFR9214)

• Straight Lead (IRFU9214, SiHFU9214)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

SYMBOL

DPAK (TO-252)

IRFR9214TRPbF

SiHFR9214T-E3

IRFR9214TR

SiHFR9214T

dV/dt

processing

, T

stg

techniques

- 55 to + 150

LIMIT

- 250

260

± 20

- 2.7

- 1.7

0.40

- 2.7

- 5.0

- 11

100

5.0

Vishay Siliconix

IPAK (TO-251)

IRFU9214PbF

SiHFU9214-E3

IRFU9214

SiHFU9214

www.vishay.com

achieve

UNIT

W/°C

RoHS*

V/ns

COMPLIANT

°C

Available

low

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