IRFR9310TR Vishay, IRFR9310TR Datasheet - Page 6
![MOSFET P-CH 400V 1.8A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9310TR
Manufacturer Part Number
IRFR9310TR
Description
MOSFET P-CH 400V 1.8A DPAK
Manufacturer
Vishay
Datasheet
1.IRFR9310.pdf
(9 pages)
Specifications of IRFR9310TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
7 Ohms
Drain-source Breakdown Voltage
- 400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR9310TR
Manufacturer:
IR
Quantity:
1 000
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
www.vishay.com
6
Fig. 9 - Maximum Drain Current vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
25
0.01
0.1
10
0.00001
1
D = 0.50
50
T , Case Temperature ( C)
C
0.20
0.10
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
0.0001
100
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
1. Duty factor D = t / t
2. Peak T = P
GS
DS
Notes:
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
J
V
DS
DM
t
r
x Z
1
0.1
thJC
P
2
DM
D.U.T.
+ T
R
C
t
S-82992-Rev. B, 12-Jan-09
1
Document Number: 91284
D
t
d(off)
t
2
t
f
+
-
V
DD
1