IRFU9214PBF Vishay, IRFU9214PBF Datasheet - Page 4

• Manufacturer Part Number: IRFU9214PBF
• Description: MOSFET P-CH 250V 2.7A I-PAK
• Manufacturer: Vishay

Specifications of IRFU9214PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 220pf @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -250V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFU9214PBF

Document Number: 91282
400
300
200
100
0.1
10
0
1
1.0
1
-V
V
DS
SD
V
C
C
C
2.0
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
=
=
=
=
T = 150 C
J
0V,
C
C
C
gs
gd
ds
T = 25 C
+ C
+ C
J
3.0
10
°
f = 1MHz
gd ,
gd
°
C oss
C rss
C iss
C
ds
4.0
SHORTED
V
GS
= 0 V
100
5.0
100
0.1
10
1
20
16
12
8
4
0
10
0
T
T
Single Pulse
I =
C
J
D
= 25 C
= 150 C
-V
OPERATION IN THIS AREA LIMITED
-1.7 A
DS
°
°
Q , Total Gate Charge (nC)
3
, Drain-to-Source Voltage (V)
G
BY R
6
V
V
V
DS
DS
DS
100
DS(on)
=-200V
=-125V
=-50V
FOR TEST CIRCUIT
SEE FIGURE
9
www.vishay.com
100us
1ms
10ms
12
13
1000
15
4