IRFD224PBF Vishay, IRFD224PBF Datasheet

MOSFET N-CH 250V 630MA 4-DIP

IRFD224PBF

Manufacturer Part Number
IRFD224PBF
Description
MOSFET N-CH 250V 630MA 4-DIP
Manufacturer
Vishay
Datasheets

Specifications of IRFD224PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 380mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
630mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
1.1 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.63 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
250V
On Resistance Rds(on)
1.1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD224PBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
Document Number: 91132
S10-2462-Rev. C, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 4.4 A, dI/dt  90 A/μs, V
= 50 V, starting T
()
D
HVMDIP
a
S
a
J
G
= 25 °C, L = 15 mH, R
c
a
DD
b
V
 V
GS
= 10 V
DS
G
, T
J
N-Channel MOSFET
Single
 150 °C.
250
2.7
7.8
14
g
= 25 , I
A
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
1.1
GS
AS
at 10 V
= 2.5 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRFD224PbF
SiHFD224-E3
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serveres as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
IRFD224, SiHFD224
design,
- 55 to + 150
0.0083
LIMIT
300
± 20
0.63
0.40
0.63
0.10
250
5.0
1.0
4.8
60
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
RoHS
W
COMPLIANT
V
A
A
and
1

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IRFD224PBF Summary of contents

Page 1

... The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on S standard 0.1" pin centers. The dual drain serveres as a thermal link to the mounting surface for power dissipation N-Channel MOSFET levels HVMDIP IRFD224PbF SiHFD224- °C, unless otherwise noted ° ...

Page 2

... IRFD224, SiHFD224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted °C A Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 91132 S10-2462-Rev. C, 08-Nov- ° 150 °C = 150 °C A IRFD224, SiHFD224 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFD224, SiHFD224 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 150 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91132 S10-2462-Rev. C, 08-Nov-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91132 S10-2462-Rev. C, 08-Nov- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms t , Rectangular Pulse Duration (s) 1 IRFD224, SiHFD224 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...

Page 6

... IRFD224, SiHFD224 Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91132. Document Number: 91132 S10-2462-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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