IRFU420APBF Vishay, IRFU420APBF Datasheet - Page 5

• Manufacturer Part Number: IRFU420APBF
• Description: MOSFET N-CH 500V 3.3A I-PAK
• Manufacturer: Vishay

Specifications of IRFU420APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFU420APBF

Document Number: 91274
S10-1135-Rev. B, 10-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
5.0
4.0
3.0
2.0
1.0
0.0
Fig. 12a - Unclamped Inductive Test Circuit
25
0.01
R
0.1
10
20 V
0.00001
g
1
V
DS
D = 0.50
t
p
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
C
I
AS
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Driver
( C)
°
125
+
- V
DD
A
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
1. Duty factor D =
2. Peak T
Notes:
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
J
= P
V
DS
t
DM
r
x Z
t
t / t
p
1
0.1
thJC
P
2
D.U.T.
DM
+ T
Vishay Siliconix
R
D
C
t
t
1
d(off)
V
DS
t
2
t
f
+
-
www.vishay.com
V
DD
1
5