IRFR9210 Vishay, IRFR9210 Datasheet - Page 6
![MOSFET P-CH 200V 1.9A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9210
Manufacturer Part Number
IRFR9210
Description
MOSFET P-CH 200V 1.9A DPAK
Manufacturer
Vishay
Datasheet
1.IRFR9210.pdf
(8 pages)
Specifications of IRFR9210
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.9nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.9A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFR9210
Q943762
Q943762
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR9210
Manufacturer:
IR
Quantity:
5 000
Company:
Part Number:
IRFR9210PBF
Manufacturer:
Vishay Semiconductors
Quantity:
135
Company:
Part Number:
IRFR9210PBF
Manufacturer:
VISHAY
Quantity:
9 738
Company:
Part Number:
IRFR9210TRPBF
Manufacturer:
Vishay/Siliconix
Quantity:
35 377
Company:
Part Number:
IRFR9210TRPBF
Manufacturer:
Maxim
Quantity:
20
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
g
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S10-1139-Rev. B, 17-May-10
Document Number: 91281
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD