IRFU9210 Vishay, IRFU9210 Datasheet
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IRFU9210
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IRFU9210 Summary of contents
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... Power MOSFET FEATURES • Dynamic dV/dt Rating - 200 • Repetitive Avalanche Rated 3.0 • Surface Mount (IRFR9210, SiHFR9210) 8.9 • Straight Lead (IRFU9210, SiHFU9210) 2.1 • Available in Tape and Reel 3.9 Single • P-Channel • Fast Switching S • Lead (Pb)-free Available DESCRIPTION The Power MOSFETs technology is the key to Vishay’ ...
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... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...
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... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...
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... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current I AS ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91281. Document Number: 91281 S09-0060-Rev. A, 02-Feb-09 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...