IRFBC30ASTRLPBF Vishay, IRFBC30ASTRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRFBC30ASTRLPBF
• Description: MOSFET N-CH 600V 3.6A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC30ASTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
400
300
200
100
0
25
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Starting T , Junction Temperature ( C)
Q
50
GS
J
Charge
Q
75
Q
GD
G
100
TOP
BOTTOM
125
°
1.6A
2.3A
3.6A
I D
150
740
720
700
680
660
640
Fig. 12d - Typical Drain-to-Source Voltage vs.
0.0
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Avalanache Current
I AV , Avalanche Current ( A)
1.0
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
2.0
S10-2433-Rev. B, 25-Oct-10
Document Number: 91109
D.U.T.
I
D
3.0
+
-
V
DS
4.0