IRF840ASTRLPBF Vishay, IRF840ASTRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF840ASTRLPBF
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840ASTRLPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91066
0.01
8.0
6.0
4.0
2.0
0.0
0.1
10
0.00001
1
25
D = 0.50
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
Case Temperature

(THERMAL RESPONSE)
75
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
0.001
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01

R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
IRF840AS/LPbF
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
10V
V
GS
V
t
r
DS
J
DM
x Z
1
0.1

D.U.T.
thJC
P
2
DM
R
+ T
t
d(off)
D
www.vishay.com
C
t
1
t
t
f
2
+
-
V
DD
1
5