IRLD110 Vishay, IRLD110 Datasheet - Page 3

• Manufacturer Part Number: IRLD110
• Description: MOSFET N-CH 100V 1A 4-DIP
• Manufacturer: Vishay

Specifications of IRLD110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 540 mOhm @ 600mA, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLD110

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91309
S10-2465-Rev. C, 08-Nov-10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
20 µs PULSE WIDTH
T
20 µs PULSE WIDTH
T
A
A
= 175 °C
= 25 °C
A
A
= 175 °C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 3 - Typical Transfer Characteristics
IRLD110, SiHLD110
Vishay Siliconix
www.vishay.com
3