IRF520 Vishay, IRF520 Datasheet - Page 4

• Manufacturer Part Number: IRF520
• Description: MOSFET N-CH 100V 9.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF520

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520; IRF520IR

IRF520, SiHF520
Vishay Siliconix
www.vishay.com
4
91017_05
91017_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
750
600
450
300
150
20
16
12
0
8
4
0
10
0
0
I
D
= 9.2 A
V
DS ,
4
Q
V
DS
Drain-to-Source Voltage (V)
G
, Total Gate Charge (nC)
= 20 V
V
DS
8
V
C
C
C
GS
= 50 V
iss
rss
oss
V
= C
= 0 V, f = 1 MHz
= C
DS
= C
10
= 80 V
gs
gd
ds
12
1
+ C
C
C
C
+ C
iss
oss
rss
gd
gd
For test circuit
see figure 13
, C
ds
16
Shorted
20
91017_08
91017_07
10
10
10
10
10
0.1
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1
-1
3
2
0
5
2
5
2
5
2
5
2
1
0.1
0.5
2
Fig. 8 - Maximum Safe Operating Area
0.6
V
V
DS
SD
5
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
1
25
0.7
175
°
2
C
T
T
Single Pulse
°
C
C
J
0.8
by R
= 175 °C
5
= 25 °C
10
DS(on)
0.9
2
S-81240-Rev. A, 16-Jun-08
Document Number: 91017
5
1.0
10
100
1
10
10
2
V
ms
GS
2
ms
1.1
µs
µs
= 0 V
5
10
1.2
3