IRF9510 Vishay, IRF9510 Datasheet - Page 4

• Manufacturer Part Number: IRF9510
• Description: MOSFET P-CH 100V 4A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9510

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9510

IRF9510, SiHF9510
Vishay Siliconix
www.vishay.com
4
91072_06
91072_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
350
280
210
140
20
16
12
70
8
4
0
0
10
0
I
0
D
= - 4.0 A
- V
DS ,
2
Q
G
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
V
DS
4
V
C
C
C
= - 20 V
GS
iss
rss
oss
= C
V
= 0 V, f = 1 MHz
= C
= C
DS
10
gs
gd
ds
6
= - 50 V
1
+ C
+ C
V
DS
gd
gd
For test circuit
see figure 13
, C
C
C
C
= - 80 V
iss
oss
rss
ds
8
Shorted
10
91072_07
91072_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-2
-1
0
2
1
5
2
5
2
5
2
5
2
1
1.0
0.1
Fig. 8 - Maximum Safe Operating Area
2
- V
- V
175
5
SD
DS
Operation in this area limited
2.0
°
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
C
2
T
T
Single Pulse
C
J
= 175 °C
= 25 °C
by R
5
3.0
10
DS(on)
S09-0017-Rev. A, 19-Jan-09
25
Document Number: 91072
2
°
C
5
4.0
10
100
1
10
2
V
ms
GS
2
ms
µs
= 0 V
5
5.0
10
3