IRF9530 Vishay, IRF9530 Datasheet - Page 6

MOSFET P-CH 100V 12A TO-220AB

IRF9530

Manufacturer Part Number
IRF9530
Description
MOSFET P-CH 100V 12A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF9530

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
88W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9530

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IRF9530, SiHF9530
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
I
G
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
A
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S-81272-Rev. A, 16-Jun-08
Document Number: 91076
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD

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