IRLD024 Vishay, IRLD024 Datasheet - Page 6
![MOSFET N-CH 60V 2.5A 4-DIP](/photos/5/47/54769/698-4-dip_sml.jpg)
IRLD024
Manufacturer Part Number
IRLD024
Description
MOSFET N-CH 60V 2.5A 4-DIP
Manufacturer
Vishay
Datasheet
1.IRLD024.pdf
(8 pages)
Specifications of IRLD024
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
870pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLD024
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLD024
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLD024PBF
Manufacturer:
IR
Quantity:
20 000
IRLD024, SiHLD024
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
5.0 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
5.0 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2465-Rev. C, 08-Nov-10
Document Number: 91308
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS